Aspect ratio of radiation-hardened MOS transistors

Floating-gate Mos Synapse Transistors

Small Signal Models of MOS Technology Transistors

In this supplement to formal class lectures, we develop the small signal models for metaloxide-semiconductor field-effect transistor (MOSFET) technologies. Despite the exclusive focus on MOS technologies, the reader will surmise that the fundamental concepts and strategies of small signal modeling presented herewith are generally applicable to bipolar, III-V compound, and other semiconductor de...

Shot noise behaviour of subthreshold MOS transistors

2014 It is shown that assuming weak inversion, low drain current asymptotic value of the gate equivalent noise resistor is given by n2/2 UT/ID, corresponding to shot noise. Measurements confirming this theory as well as flicker noise measurements on n and p channel transistors integrated with either bulk or SOS CMOS silicon gate technology are presented. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉC...

Project 1: Circuit properties of MOS transistors

Introduction: There are two types of MOS transistors, pMOS and nMOS, which are usually employed as digital switches to implement some Boolean functions. Although the MOS transistors are treated conceptually as digital devices that have logical values either “true” or “false”, they are intrinsically analog devices whose node voltage and branch current are real numbers. Thus, in order to make bes...

RAD750 Radiation Hardened PowerPC Microprocessor

The development of a high performance radiation hardened PowerPC microprocessor is nearing completion. The features of the RAD750 are described, as well as the process of radiation hardening the processor. The RAD750 product family includes a PCI support chip and a CompactPCI 3U board, both of which are described.